Nanometer CMOS

This book gives a comprehensive overview of all important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory and scaling issues and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs and non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits and drawbacks of MOSFET concepts, such as strained Si MOSFETs, ultra-thin-body SOI MOSFETs and multiple-gate MOSFETs (FinFETs, tri-gate MOSFETs) are presented.

An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in nanometer CMOS technology and the problems and limits of scaling.