Nanoscale CMOS has become mainstream technology. This book deals with a very important topic and is written by two well-known contributors to the field. It is a very timely and important book.Prof. Michael Shur, Rensselaer Polytechnic Institute, USA
- Format: Hardcover
- ISBN: 9789814241083
- Subject: Semiconductors
- Published: February 2010
- Pages: 340
This book gives a comprehensive overview of all important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory and scaling issues and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs and non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits and drawbacks of MOSFET concepts, such as strained Si MOSFETs, ultra-thin-body SOI MOSFETs and multiple-gate MOSFETs (FinFETs, tri-gate MOSFETs) are presented.
An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in nanometer CMOS technology and the problems and limits of scaling.
* Evolution and Recent Advances in Si Electronics
* MOSFET Fundamentals, Theory, and Modeling
* Nanometer MOSFETs
* RF MOSFETs
* Overview of Nanometer CMOS Technology
* Challenges of Giga-Scale Integration
Nanoscale CMOS has become mainstream technology. This book deals with a very important topic and is written by two well-known contributors to the field. It is a very timely and important book.~Prof. Michael Shur, Rensselaer Polytechnic Institute, USA
This book combines the knowledge of three distinguished authors in a unique blend transcending from early history to modern-day nanotechnology; the text will be enjoyable, educational and illuminating for the technical novice and the modern expert.~Dr. Steven Voldman, ESD Association, USA