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Electronic Device Architectures for the Nano-CMOS Era

Electronic Device Architectures for the Nano-CMOS Era

From Ultimate CMOS Scaling to Beyond CMOS Devices

This book offers an excellent insight into the micro-to-nano transition that the electronics industry is currently engaged in. The different chapters clearly illustrate the latest stages of evolution of the 'classical' silicon transistor and explore next-generation devices which are likely to be its successor. It is an excellent reference for scientists and students interested in the future of electronics.
Prof. Jean-Pierre Colinge, Tyndall National Institute, Ireland

Hardcover eBook eBook (Kindle) eBook (EPUB)

Format: Hardcover
ISBN: 9789814241281
Subject: Semiconductors
Published: October 2008
Pages: 426

USD $180.00

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Description
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Praise

In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. What are the fundamental limits of core CMOS, and can we improve the scaling by the introduction of new materials or processes? Will the new architectures using SOI, multigates or multichannels improve the trade-off between performance and power consumption and relax the constraints of new material integration? Can quantum computing replace binary-based protocols to enhance the information-processing power? These and other questions are answered in this book.

thomson

• CMOS Nanoelectronics. Reaching the End of the Roadmap:
• Core CMOS:
• Physical and Technological Limitations of NanoCMOS Devices to the End of the Roadmap and Beyond (S Deleonibus, O Faynot, B de Salvo, T Ernst, C Le Royer, T Poiroux & M Vinet)
• Advanced CMOS Devices on Bulk and SOI: Physics, Modeling and Characterization (T Poiroux & G Le Carval)
• Devices Structures and Carrier Transport Properties of Advanced CMOS using High Mobility Channels (S Takagi, T Tezuka, T Irisawa, S Nakaharai, T Numata, K Usuda, N Sugiyama, M Shichijo, R Nakane & S Sugahara)
• High-kappa Gate Dielectrics (H Wong, K Shiraishi, K Kakushima & H Iwai)
• Fabrication of Source and Drain — Ultra Shallow Junction (B Mizuno)
• New Interconnect Schemes: End of Copper, Optical Interconnects? (S Laval, L Vivien, E Cassan, D Marris-Morini & J-M Fédéli)
• Memory Devices:
• Technologies and Key Design Issues for Memory Devices (K Kim & G Jeong)
• FeRAM and MRAM Technologies (Y Arimoto)
• Advanced Charge Storage Memories: From Silicon Nanocrystals to Molecular Devices (B De Salvo & G Molas)
• New Concepts for Nanoelectronics. New Paths Added to CMOS Beyond the End of the Roadmap:
• Single Electron Devices and Applications (J Gautier, X Jehl & M Sanquer)
• Electronic Properties of Organic Monolayers and Molecular Devices (D Vuillaume)
• Carbon Nanotube Electronics (V Derycke, A Filoramo & J-P Bourgoin)
• Spin Electronics (K-J Lee & S H Lim)
• The Longer Term: Quantum Information Processing and Communication (P Jorrand)

Simon Deleonibus retired from CEA-LETI on January 1, 2016, as chief scientist after 30 years of research on the architecture of micro- and nanoelectronic devices. Before joining CEA-LETI, he was with Thomson Semiconductors (1981–1986), where he developed and transferred to production advanced microelectronic devices and products. He obtained his PhD in applied physics from Paris University (1982). A recipient of several awards and honors, he is a visiting professor at Tokyo Institute of Technology (Tokyo, Japan) since 2014, National Chiao Tung University (Hsinchu, Taiwan) since 2015, and Chinese Academy of Science (Beijing, PRC) since 2016.

He is distinguished CEA Research Director(2002), IEEE Distinguished Lecturer(2004), Fellow of the IEEE (2006), Fellow of the Electrochemical Society (2015).
He was awarded the titles of Chevalier de l’Ordre National du Mérite(2004) and Chevalier de l’Ordre des Palmes Académiques(2011), the 2005 Grand Prix de l’Académie des Technologies. He is member of the ITRS since1998, the European Research Council Panel(2007), the Nanosciences Foundation Board of Trustees( 2007).

He was Associate Editor of IEEE Trans. on Elect. Dev.(2008-2014) and Member of the IEEE Electron Devices Society Board of Governors(01/2009-12/2014) and reelected(2016-2018) ; Chair of IEEE EDS Region 8 SRC (2015-2016) ; Secretary of IEEE Electron Devices Society (2016-2017).

This book offers an excellent insight into the micro-to-nano transition that the electronics industry is currently engaged in. The different chapters clearly illustrate the latest stages of evolution of the 'classical' silicon transistor and explore next-generation devices which are likely to be its successor. It is an excellent reference for scientists and students interested in the future of electronics.
~Prof. Jean-Pierre Colinge, Tyndall National Institute, Ireland

The internationally recognized authors of this book provide a fascinating, information-packed reference for scientists, engineers and students interested in ultimately scaled CMOS and the emerging new 'Beyond CMOS' device technologies. By encompassing this broad technological vista in a single volume, the authors provide unique perspectives into the current issues and future challenges facing the semiconductor industry as we expand information-processing technologies to completely new applications.
~Dr. Jim Hutchby, Semiconductor Research Corporation, USA

This unique book is a must for everybody active in the field and/or interested in the technology of state-of-the-art and future electronic devices. Great work about small things.
~Prof. Cor Claeys, IMEC, Belgium