Takashi Ohsawa received his BS and MS in physics from Waseda University, Tokyo, Japan, in 1977 and 1979, respectively, and his PhD in electronics engineering from the University of Tsukuba, Tsukuba, Japan, in 2009. After working in Toshiba for 15 years, in 1997 he joined the DRAM Development Alliance among IBM, Siemens, and Toshiba as a manager of the 256 Mb DRAM Product Design Department in Essex Junction, Vermont, USA. From 2000 to 2010, Dr Ohsawa worked again for Toshiba for R&D in novel memory technologies including the floating body cell (FBC). He received the Takuo Sugano Award of ISSCC in 2003 for the outstanding Far East paper on FBC. Dr. Ohsawa is currently a professor in the Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan.
Takeshi Hamamoto received his BSc, MSc, and PhD from Waseda University, Tokyo, in 1982, 1984, and 1997, respectively. In 1984 he joined the VLSI Research Centre, Toshiba Corporation, Kawasaki, Japan, where he was engaged in research into memory-cell technologies for high-density DRAMs. From 1989 to 1992 he worked on the development of 16 Mb DRAM products, and since 1993 he has been engaged in the R&D of device and process technologies for high-density/high-performance DRAMs. At present, he is a chief specialist with the Advanced Memory Device Technology Department, Centre for Semiconductor Research and Development, Toshiba Corporation, and is developing technologies for SOI and other novel memories.
