• CMOS Nanoelectronics. Reaching the End of the Roadmap:
• Core CMOS:
• Physical and Technological Limitations of NanoCMOS Devices to the End of the Roadmap and Beyond (S Deleonibus, O Faynot, B de Salvo, T Ernst, C Le Royer, T Poiroux & M Vinet)
• Advanced CMOS Devices on Bulk and SOI: Physics, Modeling and Characterization (T Poiroux & G Le Carval)
• Devices Structures and Carrier Transport Properties of Advanced CMOS using High Mobility Channels (S Takagi, T Tezuka, T Irisawa, S Nakaharai, T Numata, K Usuda, N Sugiyama, M Shichijo, R Nakane & S Sugahara)
• High-kappa Gate Dielectrics (H Wong, K Shiraishi, K Kakushima & H Iwai)
• Fabrication of Source and Drain — Ultra Shallow Junction (B Mizuno)
• New Interconnect Schemes: End of Copper, Optical Interconnects? (S Laval, L Vivien, E Cassan, D Marris-Morini & J-M Fédéli)
• Memory Devices:
• Technologies and Key Design Issues for Memory Devices (K Kim & G Jeong)
• FeRAM and MRAM Technologies (Y Arimoto)
• Advanced Charge Storage Memories: From Silicon Nanocrystals to Molecular Devices (B De Salvo & G Molas)
• New Concepts for Nanoelectronics. New Paths Added to CMOS Beyond the End of the Roadmap:
• Single Electron Devices and Applications (J Gautier, X Jehl & M Sanquer)
• Electronic Properties of Organic Monolayers and Molecular Devices (D Vuillaume)
• Carbon Nanotube Electronics (V Derycke, A Filoramo & J-P Bourgoin)
• Spin Electronics (K-J Lee & S H Lim)
• The Longer Term: Quantum Information Processing and Communication (P Jorrand)
