Intelligent Integrated Systems

This book gives a state-of-the-art overview by internationally-recognized researchers of the breakthrough  devices architectures required for Future Intelligent Integrated Systems first book in the Pan Stanford Series on Intelligent Nanosystems. Both Advanced Silicon based CMOS Technologies and New Paths to Augmented Silicon CMOS Technologies, appearing in the first section and the second section respectively, feature More Moore , More Than Moore and Beyond type of devices of interest to building Heterogeneous integrated systems . The First section highlights Advanced Silicon based CMOS Technologies with Fully Depleted Planar , Trigate and Nanowire MOSFETs,  Schottky source and drains architectures and possible candidates channel materials to be co integrated with Silicon On Insulator such a s Ge, III-V and Carbon or isolate silicon channel with Diamond. New Device and Functional architectures are as well reviewed by Tunneling Field Effect Transistors and 3D Monolithic Integration which the alternative materials could possibly use in the future. The way we could Augment Silicon Technologies is illustrated  by the co- integration  of new types of devices such as Molecular and Resistive, Spintronics based  Memories, Smart Sensors using Nano scale features co- integrated with silicon CMOS or above it. 3D integration and Wafer Level Packaging are coming up as well to pack up new functions and products. The challenges to be addressed and possible solutions are described in this book.

Key Features:

• In the 1st section Advanced Silicon based CMOS Technologies to further scaling of CMOS Alternative Channel and Interconnects materials(Germanium on Insulator, III-V , Carbon Nanotubes and Graphene), Alternative Substrate materials(Silicon on Diamond), Schottky Source and Drain Single and Double gate MOSFETs, Tunneling Field Effect Transistors,  and elementary 3D functions architectures by 3D monolithic integration.
• In the 2nd  section : New Paths to Augmented Silicon CMOS Technologies.  New memory devices architectures based on molecular approaches, resistive memories and spintronic devices, mixed logic and non volatile memories, non volatile logic, nanoelectromechanical sensing based on nanowires high frequency resonators for ultra low resolution gas detection and electronic nose applications,  Smart Multiphysics Sensors: Capacitive pressure sensors by wafer level packaging, electrostatically levitated gyroscopes,  tactile sensor networks for safe nursing robots, acoustic sensors for wireless sensing, optical scanner for 3D imaging, sensors at the end of catheter in blood vessel and high spatial resolution and high sensitivity microprobes. 3D integration, Wafer Level Packaging, System on Chip, System in Package, Through Silicon Vias.
• A first insight into the Heterogeneous , quasi-zero variability  Nanoelectronics by the choice of materials, device integration and architecture which will be continued in the second volume.