Hydrogenated Dilute Nitride Semiconductors

The nonlinear behavior of nitrogen and the passivation effect of hydrogen open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure of technologically important dilute nitride semiconductors and the optical and structural properties induced in them by atomic hydrogen irradiation. 

The book comprises discussion on experimental results from several techniques, enriched by state-of-the-art theoretical studies aimed at clarifying the origin of hydrogenation effects that lead to the formation of specific nitrogen–hydrogen complexes. It presents techniques, such as infrared spectroscopy, synchrotron radiation, and nuclear reaction, which have indeed been crucial for discovering the physical origin of hydrogenation effects and their role in fine structural characterization.

The book is not thought as a simple assembly of the contributions of different groups on the subject, it rather tells the complete story of the amazing effects of hydrogen irradiation from the first observations to the discovery of their physical origin and to technology transfer. The primary scope of the book is to guide PhD students and new scientists into the field and to inspire similar analysis approaches in other fields.