Impressive developments of molecular beam and metalorganic vapor phase epitaxy have led to the realization of high-quality, single-crystalline III-V heterostructure nanowires with precisely controlled properties on the atomic scale. Due to high mobility and superior optical performance, such nitride-, phosphide-, and arsenide-based nanowires are considered among key materials for the next-generation nanoscale photonic and electronic devices, including highly efficient light emitters and solar cells, as well as high-speed transistors. The device functionality can be further extended by utilizing highly mismatched alloys formed from III-V compounds with a large miscibility gap or by the formation of hybrid nanowire heterostructures between III-V semiconductors and magnetic half metals and oxides. This book reviews the recent progress of such novel nanowire systems and covers a wide range of aspects ranging from epitaxial growth to device applications.
About the Editors
Fumitaro Ishikawa received his PhD in electronic engineering in 2004 from Hokkaido University, Japan. From 2004 to 2006, he worked in Paul-Drude-Institut für Festkörperelektronik, Germany. In 2007, he became an assistant professor at Osaka University, Japan. Since 2013, he is an associate professor at Ehime University, Japan. Prof. Ishikawa has worked on the molecular beam epitaxy of compound semiconductors throughout his career. His current research interests focus on the synthesis of advanced materials based on compound semiconductor nanostructures.
Irina A. Buyanova received her PhD in solid-state physics in 1987 from the Institute for Semiconductors, Ukrainian Academy of Sciences, Kiev. In 1994, she joined the Department of Physics, Chemistry and Biology at Linköping University, Sweden. In 2002, she was awarded a senior researcher grant of excellence from the Swedish Research Council followed by a professorship at Linköping University in 2007. Prof. Buyanova’s current research interests focus on the physics and applications of novel spintronic materials, advanced electronic and photonic materials based on wide-bandgap semiconductors and highly mismatched semiconductors, and related nanostructures.