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Compound Semiconductors

Physics, Technology, and Device Concepts

by Ferdinand Scholz

“This book presents a comprehensive overview of compound semiconductor physics and technology, with a strong emphasis on optoelectronic devices. It excellently describes the fundamentals of solid-state physics as applied to compound semiconductors. The concepts of device applications, as well as experimental techniques and fabrication, are explained and discussed in depth. The theoretical description is further complemented by appropriate experimental examples and applications. Not only the book is addressed to graduate students, but it is an ideal reference for the professionals working in this area.”

Dr. Matthias Peter, Principal Key Expert Epitaxy, Osram Opto Semiconductors GmbH, Germany
  • Format: Hardcover
  • ISBN: 9789814774079
  • Subject: Electronic Materials
  • Published: October 2017
  • Pages: 306

This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are covered. The book contains a special chapter on GaN and related materials, underlining their great importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared with other compound semiconductors, on the other. The last part of the book discusses the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, and field-effect and heterojunction bipolar transistors) on the basis of the specific properties of the compound semiconductors presented in the book.

About the Author

Ferdinand Scholz is full professor at the Institute of Optoelectronics, Ulm University, Germany, since 2003 and headed the epitaxial group of the Physical Institute, University of Stuttgart, Germany, until 2003. He graduated with a diploma in physics in 1981 and obtained a PhD in metal-organic vapor phase epitaxy of GaInAs-InP quantum well structures in 1986 from the University of Stuttgart. His current research focuses on the growth and investigations of group III nitrides, quantum well structures, and nanorods and their applications in device structures. Prof. Scholz has authored or co-authored more than 400 scientific papers in refereed journals. He is a member of the Deutsche Physikalische Gesellschaft and the Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung.