Oxide Spintronics

Oxide materials have been used in mainstream semiconductor technology for several decades and have served as important components, such as gate insulators or capacitors, in integrated circuits. However, in recent decades, this material class has emerged in its own right as a potential contender for alternative technologies, generally designated as ‘beyond Moore’. The 2004 discovery by Ohtomo and Hwang was a global trendsetter in this context. It involved observing a two-dimensional, high-mobility electron gas at the heterointerface between two insulating oxides, LaAlO₃ and SrTiO₃, supported by the rise of nascent deposition and growth-monitoring techniques, which was an important direction in materials science research. The quest to understand the origin of this unparalleled physical property and to find other emergent properties has been an active field of research in condensed matter that has united researchers with expertise in diverse fields such as thin-film growth, defect control, advanced microscopy, semiconductor technology, computation, magnetism and electricity, spintronics, nanoscience, and nanotechnology. This book showcases the important scientific advances that have been made in this direction with new oxide material interfaces or with new techniques.

Key Features:

• Presents state-of-the-art research in oxide spintronics
• Combines research expertise from thin-film growth, defect control, advanced microscopy, semiconductor technology, computation, magnetism and electricity, spintronics, nanoscience, and nanotechnology
• Is a suitable and important handbook for oxide spintronics researchers and graduates as it  covers in great depth the  recent research contributions in the field of complex oxides