This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
- First book to introduce strain engineering in the design of flexible and stretchable electronic devices
- Computer aided microelectronics education to enhance students learning
- Presents detailed examples of two- and three-dimensional process and device simulation
- Broad coverage spanning conventional to the state-of-the-art stress- and strain-engineered devices at 7 nm and smaller technology nodes