Ikunori Takata received his bachelor’s and master’s degrees in physics from Kobe University, Kobe, Japan, in 1972 and 1974, respectively. He joined Mitsubishi Electric Corporation in 1974 as an engineer at the company’s Kita-Itami Works, where he
developed the first transistor power module chips and solved the second breakdown phenomena of bipolar junction transistors. Later, he moved to the company’s corporate research center and was charged with managing trench insulated gate bipolar transistor (IGBT) and very-high-voltage (several thousand volts) IGBT device development.
In his last 10 years with Mitsubishi, he worked in the device simulation area and researched the operating limits of IGBTs and the basic operations of pin diodes and bipolar junction transistors (BJTs). After retiring from Mitsubishi in 2010, he was a visiting lecturer of advanced power devices at Tokyo Institute of Technology until 2016.