Writam Banerjee, a prominent nanotechnology researcher, is assistant professor at the Institute of Microelectronics of the Chinese Academy of Science (IMECAS), Beijing, China, since 2014. He received his MSc and BSc in physics from Vidyasagar University, West Bengal, India, and PhD in electronics engineering from Chang Gung University, Taiwan. From 2012 to 2013, he was a visiting scientist at PGI-7, Forschungszentrum Jülich, Germany, where he led a joint project for Intel Corporation, California, USA, and Forschungszentrum Jülich. He was also engaged in the development of nano-crossbar RRAM devices and integration with transistors in collaboration with IMEC, Belgium. Dr. Banerjee has authored and co-authored over 30 articles in reputed international journals and over 50 publications in conference proceedings. His current research interests include novel, high-κ nanocrystals and the design, fabrication, characterization, and analysis of RRAM, vertical RRAM (VRRAM), crossbar memory, storage class memory, and high-density nanoscale 3D memory devices.